TSHA620. vishay semiconductors 1 (6) rev. 2, 20-may-99 www.vishay.com document number 81021 gaalas infrared emitting diodes in 5 mm (t1 ) package description the TSHA620. series are high efficiency infrared emit- ting diodes in gaalas on gaalas technology, molded in a clear, untinted plastic package. in comparison with the standard gaas on gaas technology these high intensity emitters feature about 70 % radiant power improvement. in contrast to the tsha520. series lead standoffs are omitted. features extra high radiant power and radiant intensity suitable for high pulse current operation standard t1 ( 5 mm) package leads formed without standoff angle of half intensity j = 12 peak wavelength p = 875 nm high reliability good spectral matching to si photodetectors 94 8389 applications infrared remote control and free air transmission systems with high power and long transmission distance re- quirements in combination with pin photodiodes or phototransistors. because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit reverse voltage v r 5 v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 2.5 a power dissipation p v 210 mw junction temperature t j 100 c operating temperature range t amb 55...+100 c storage temperature range t stg 55...+100 c soldering temperature t 5sec, 2 mm from case t sd 260 c thermal resistance junction/ambient r thja 350 k/w
TSHA620. vishay semiconductors 2 (6) rev. 2, 20-may-99 www.vishay.com document number 81021 basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit forward voltage i f = 100 ma, t p = 20 ms v f 1.5 1.8 v temp. coefficient of v f i f = 100ma tk vf 1.6 mv/k reverse current v r = 5 v i r 100 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 20 pf temp. coefficient of e i f = 20 ma tk e 0.7 %/k angle of half intensity j 12 deg peak wavelength i f = 100 ma p 875 nm spectral bandwidth i f = 100 ma 80 nm temp. coefficient of p i f = 100 ma tk p 0.2 nm/k rise time i f = 100 ma t r 600 ns i f = 1.5 a t r 300 ns fall time i f = 100 ma t f 600 ns i f = 1.5 a t f 300 ns type dedicated characteristics t amb = 25 c parameter test conditions type symbol min typ max unit forward voltage i f =1.5a, t p =100 s TSHA6200/6201 v f 3.2 4.9 v g f TSHA6202/6203 v f 3.2 4.5 v i f =100ma, TSHA6200 i e 25 40 mw/sr f t p =20ms TSHA6201 i e 30 50 mw/sr TSHA6202 i e 36 60 mw/sr radiant intensity TSHA6203 i e 50 65 mw/sr radiant intensity i f =1.5a, t p =100 s TSHA6200 i e 300 500 mw/sr f TSHA6201 i e 400 600 mw/sr TSHA6202 i e 500 700 mw/sr TSHA6203 i e 600 800 mw/sr radiant power i f =100ma, TSHA6200 e 22 mw f t p =20ms TSHA6201 e 23 mw TSHA6202 e 24 mw TSHA6203 e 25 mw
TSHA620. vishay semiconductors 3 (6) rev. 2, 20-may-99 www.vishay.com document number 81021 typical characteristics (t amb = 25 c unless otherwise specified) 020406080 0 50 100 150 200 250 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 94 7957 e r thja figure 1. power dissipation vs. ambient temperature 020406080 0 25 50 75 100 125 i forward current ( ma ) f t amb ambient temperature ( c ) 100 94 8002 e figure 2. forward current vs. ambient temperature t p pulse duration ( ms ) 94 8003 e 10 0 10 1 10 1 10 1 10 1 10 0 10 2 10 2 i forward current ( a ) f t p / t = 0.01 i fsm = 2.5 a ( single pulse ) 0.05 0.1 0.2 0.5 figure 3. pulse forward current vs. pulse duration 012 3 v f forward voltage ( v ) 4 94 8005 e 10 1 10 2 10 3 10 4 i forward current ( ma ) f t p = 100 s t p / t = 0.001 figure 4. forward current vs. forward voltage 020406080 0.7 0.8 0.9 1.0 1.1 1.2 v relative forward voltage frel t amb ambient temperature ( c ) 100 94 7990 e i f = 10 ma figure 5. relative forward voltage vs. ambient temperature i f forward current ( ma ) 94 8745 10 3 10 1 10 2 10 4 10 0 1 10 100 1000 i radiant intensity ( mw/sr ) e tsha 6200 tsha 6201 tsha 6202 tsha 6203 figure 6. radiant intensity vs. forward current
TSHA620. vishay semiconductors 4 (6) rev. 2, 20-may-99 www.vishay.com document number 81021 radiant power ( mw ) e i f forward current ( ma ) 94 8007 e 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 figure 7. radiant power vs. forward current 10 10 50 0 100 0 0.4 0.8 1.2 1.6 i ; e rel e rel t amb ambient temperature ( c ) 140 94 8020 e i f = 20 ma figure 8. rel. radiant intensity\power vs. ambient temperature 780 880 wavelength ( nm ) 980 94 8000 e relative radiant power e 0 0.25 0.5 0.75 1.0 1.25 i f = 100 ma e ( ) rel = e ( )/ e ( p ) figure 9. relative radiant power vs. wavelength 0.4 0.2 0 0.2 0.4 i relative radiant intensity e rel 0.6 94 8008 e 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 10. relative radiant intensity vs. angular displacement
TSHA620. vishay semiconductors 5 (6) rev. 2, 20-may-99 www.vishay.com document number 81021 dimensions in mm 96 12125
TSHA620. vishay semiconductors 6 (6) rev. 2, 20-may-99 www.vishay.com document number 81021 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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